Interferometric analysis of strained thin silicon films

Bertrand Trolard; Gilbert M. Tribillon; Eric Bonnotte; Patrick Delobelle; Luc Bornier

doi:10.1117/12.245165

19 July 1996 Interferometric analysis of strained thin silicon films

Bertrand Trolard, Gilbert M. Tribillon, Eric Bonnotte, Patrick Delobelle, Luc Bornier

Proceedings Volume 2861, Laser Interferometry VIII: Applications; (1996) https://doi.org/10.1117/12.245165
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

With the aim to characterize mechanical properties of thin films, a widely micromechanic test, bulging, is associated with two contactless and noninvasive optical methods, holographic interferometry and projected fringes. These two complementary processes are combined with phase measurement interferometry to get out-of-plane displacements. These solutions are discussed in terms of accuracy and sensitivity. An application is presented on single crystal silicon. Experimental values are compared to results obtained with finite element modeling. Considering the same principle, measurement shapes are performed on multi-layer membranes to analyze residual stresses.

Citation Download Citation

Bertrand Trolard, Gilbert M. Tribillon, Eric Bonnotte, Patrick Delobelle, and Luc Bornier "Interferometric analysis of strained thin silicon films", Proc. SPIE 2861, Laser Interferometry VIII: Applications, (19 July 1996); https://doi.org/10.1117/12.245165

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