Effects of process parameters on microloading in subhalf-micron aluminum etching

Jongweon Youn; Ki-Soo Shin; Hee Kook Park; Daehee Kim

doi:10.1117/12.250880

13 September 1996 Effects of process parameters on microloading in subhalf-micron aluminum etching

Jongweon Youn, Ki-Soo Shin, Hee Kook Park, Daehee Kim

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250880
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

Microloading effect is one of the challenging phenomena in sub-halfmicron aluminum etching, which represents the decreasing etch rate with shrinking pattern size and open area. Process parameters should be optimized to control etch rate difference in different feature sizes. In this experiment, it is found that pressure and BCl₃/Cl₂ gas flow ratio are two major factors to affect on etch rate microloading. Under the standard BCl₃/Cl₂ chemistry, optimizing process parameters is not enough to reduce microloading sufficiently. Therefore, additional gas is introduced to suppress microloading effect less than 10%. N₂ or CHF₃ gas addition is not effective to improve microloading effect through polymerization mechanism. It is observed that CF₄ gas addition is the most successful to minimize microloading effect by enhancing ion assisted chemical reaction in small feature size.

Citation Download Citation

Jongweon Youn, Ki-Soo Shin, Hee Kook Park, and Daehee Kim "Effects of process parameters on microloading in subhalf-micron aluminum etching", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250880

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