Manufacturing sensitivity analysis of a 0.18-micron NMOSFET

Darryl Angelo; Scott A. Hareland; Shamsul A. Khan; Khaled Hasnat; Al F. Tasch Jr.; Peter Zeitzoff

doi:10.1117/12.250859

13 September 1996 Manufacturing sensitivity analysis of a 0.18-micron NMOSFET

Darryl Angelo, Scott A. Hareland, Shamsul A. Khan, Khaled Hasnat, Al F. Tasch Jr., Peter Zeitzoff

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250859
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

The control over the random variations in manufacturing processes and equipment has become increasingly critical for deep submicron MOS IC technology. This analysis involves correlating the sensitivity of eight key device electrical characteristics (responses) of a 0.18 micrometers NMOSFET to the anticipated manufacturing variations in its structural and doping parameters (inputs). Using TCAD software, a 0.18 micrometers NMOSFET has been designed and optimized to be as representative as possible of a device intended for use by industry, and has then been used as the nominal structure for the sensitivity analysis. Nine input parameters such as gate length, gate oxide, etc. were varied in accordance with a three-level Box-Behnken design, and model equations were generated. A Monte Carlo simulator was also developed to extract the statistical distribution of each response and compare it to a normal distribution that best fit the data. These models allow a quick assessment of the sensitivity of the key device electrical parameters to manufacturing variations in the NMOSFET structural and doping parameters.

Citation Download Citation

Darryl Angelo, Scott A. Hareland, Shamsul A. Khan, Khaled Hasnat, Al F. Tasch Jr., and Peter Zeitzoff "Manufacturing sensitivity analysis of a 0.18-micron NMOSFET", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250859

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