Platinum-related deep levels in silicon and their passivation by atomic hydrogen using a home-built automated DLTS system

B. P. Nagi Reddy; P. N. Reddy; S. V. Pandu Rangaiah

doi:10.1117/12.250898

13 September 1996 Platinum-related deep levels in silicon and their passivation by atomic hydrogen using a home-built automated DLTS system

B. P. Nagi Reddy, P. N. Reddy, S. V. Pandu Rangaiah

Author Affiliations +

Proceedings Volume 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II; (1996) https://doi.org/10.1117/12.250898
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

An inexpensive automated DLTS system has been developed in modular form consisting of modules such as a capacitance meter, pulse generator, DLTS system timing controller, data acquisition system, PID temperature controller, cryostat with LN₂ flow control facility, etc. These modules, except the capacitance meter and pulse generator, have been designed and fabricated in the laboratory. Further they are integrated and interfaced to PC AT/386 computer. Software has been developed to run the spectrometer, collect data and off-line data processing for the deep level parameters such as activation energy, capture cross-section and density. The system has been used to study the deep levels of platinum in n-type silicon and their passivation by atomic hydrogen. The estimated activation energy of the two acceptor levels are E_c-0.280 eV and E_c-0.522 eV and their capture cross sections are 2.2E-15 cm^-2 and 4.3E-15 cm^-2 respectively. These levels are found to be reactivated when the hydrogenated samples are annealed in the temperature range 350 - 500 degrees Celsius. The mechanism of passivation and reactivation of these levels are discussed.

Citation Download Citation

B. P. Nagi Reddy, P. N. Reddy, and S. V. Pandu Rangaiah "Platinum-related deep levels in silicon and their passivation by atomic hydrogen using a home-built automated DLTS system", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); https://doi.org/10.1117/12.250898

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