Paper
23 September 1996 Polysilicon microswitch for planar antenna phase shifters
Sandrine Lucas, King Kis-Sion, Jacques Pinel, Olivier Bonnaud
Author Affiliations +
Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251202
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
This study is based on the future realization of phase shifters for planar antennas. Phase shifters include Poly-Si microswitches taking the place of usual PIN diodes. The microswitch consists of a cantilever beam, a contact electrode and a control one. For the time being, undoped polysilicon cantilevers are produced on monosilicon substrate by surface micromachining in order to test the feasability of the process. The latter comprises a silicon dioxide sacrificial layer elaborated with magnetron rf sputtering, a LPCVD polycrystalline silicon layer and a removal of the sacrificial oxide layer by lateral etching hydrofluoric acid to undercut the polysilicon layer completely. SEM observations show an upward deflection at the end of the cantilever due to film stress gradient and also adherence between device and substrate. Strain relaxation measured by beam contraction decreases when the cantilever width increases.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sandrine Lucas, King Kis-Sion, Jacques Pinel, and Olivier Bonnaud "Polysilicon microswitch for planar antenna phase shifters", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251202
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Cited by 2 scholarly publications.
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KEYWORDS
Etching

Phase shifts

Sputter deposition

Oxygen

Low pressure chemical vapor deposition

Antennas

Electrodes

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