Preparation of silicon-based field emission materials

Guang Yuan; Young-Hyun Jin; C. Jin; Bin Zhang; Hee Chun Song; Yongqiang Ning; T. Zhou; H. Jiang; Sijia Li; Ying Tian; C. Gu

doi:10.1117/12.253350

30 September 1996 Preparation of silicon-based field emission materials

Guang Yuan, Young-Hyun Jin, C. Jin, Bin Zhang, Hee Chun Song, Yongqiang Ning, T. Zhou, H. Jiang, Sijia Li, Ying Tian, C. Gu

Author Affiliations +

Proceedings Volume 2892, Display Devices and Systems; (1996) https://doi.org/10.1117/12.253350
Event: Photonics China '96, 1996, Beijing, China

Abstract

The tip arrays on (100) oriented silicon were fabricated, and diamond films were deposited on the tip arrays by MW- PCVD method. The diamond was preferentially grown on the top of tips, and diamond film with (111) orientation was formed.

Citation Download Citation

Guang Yuan, Young-Hyun Jin, C. Jin, Bin Zhang, Hee Chun Song, Yongqiang Ning, T. Zhou, H. Jiang, Sijia Li, Ying Tian, and C. Gu "Preparation of silicon-based field emission materials", Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); https://doi.org/10.1117/12.253350

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