Measurement of noise of photovoltaic HgCdTe and InSb infrared detector

Zhongyun Tian; Ruoxi Ji; Shengqiong Lei; Boqi Gu

doi:10.1117/12.252111

25 September 1996 Measurement of noise of photovoltaic HgCdTe and InSb infrared detector

Zhongyun Tian, Ruoxi Ji, Shengqiong Lei, Boqi Gu

Proceedings Volume 2894, Detectors, Focal Plane Arrays, and Applications; (1996) https://doi.org/10.1117/12.252111
Event: Photonics China '96, 1996, Beijing, China

Abstract

An investigation of noises in two linear detector has been described in this paper. Noises were measured at 80 K from 10 - 100 KHz at different reverse bias. In all samples of HgCdTe and InSb. 1/f noises were observed. In order to decrease 1/f noise, processing needs improving further. The various noises have been discussed.

Citation Download Citation

Zhongyun Tian, Ruoxi Ji, Shengqiong Lei, and Boqi Gu "Measurement of noise of photovoltaic HgCdTe and InSb infrared detector", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252111

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