Evaluation and applications of transferred electron-intensified photo-diode (TE-IPD)

Paul James Titterton Sr.; Jay Bolstad; Harold E. Sweeney

doi:10.1117/12.273700

24 April 1997 Evaluation and applications of transferred electron-intensified photo-diode (TE-IPD)

Paul James Titterton Sr., Jay Bolstad, Harold E. Sweeney

Proceedings Volume 2990, Free-Space Laser Communication Technologies IX; (1997) https://doi.org/10.1117/12.273700
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The transferred electron-intensified photo-diode (TE-IPD) is a photomultiplier-like device that provides superior detection capability in the near IR. It was developed at Intevac ATD, and the fundamentals of its implementation have been discussed. Under NASA Goddard sponsorship, we have been conducting laboratory tests and evaluations on all aspects of this device, as well as characterizing its potential optical communication and laser radar applications. The TE- IPD can be optimized to have as much as 20 percent quantum efficiency at 1060 nm, or to provide a nearly flat response of 10 percent quantum efficiency out to 1600 nm. The internal gain can be of order 1000x or as much as 20,000x, depending on the choice of anode. We have evaluated all aspects of these variants, including spectral quantum efficiency, dark current as a function of temperature, active cathode area, gain, nose factor and spatial uniformity. We will present detailed laboratory test results and discuss device characterization s for specific system applications in terms of the sensitivity and required signal power at the detector cathode to achieve a given quality of service.

Citation Download Citation

Paul James Titterton Sr., Jay Bolstad, and Harold E. Sweeney "Evaluation and applications of transferred electron-intensified photo-diode (TE-IPD)", Proc. SPIE 2990, Free-Space Laser Communication Technologies IX, (24 April 1997); https://doi.org/10.1117/12.273700

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