Membrane distortions in x-ray masks due to specific absorber features

Adam H. Fisher; Roxann L. Engelstad; Matthew F. Laudon

doi:10.1117/12.275771

7 July 1997 Membrane distortions in x-ray masks due to specific absorber features

Adam H. Fisher, Roxann L. Engelstad, Matthew F. Laudon

Proceedings Volume 3048, Emerging Lithographic Technologies; (1997) https://doi.org/10.1117/12.275771
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Finite element models have been created to investigate the local effect of pattern placement and absorber stresses. Models of an x-x ray mask membrane have been developed which include a centrally-located absorber strip. Using these models, the magnitude and location of the maximum in-plane distortions (IPD) and out-of-plane distortions (OPD) have been determined. The IPD data from the finite element models for the absorber strip have been compared to a closed-form analytical solution. In addition, the finite element models have been further developed to include feature patterns more closely resembling the absorber patterning used in the manufacturing of actual circuit designs. In this paper, finite element results of both the local and global in-plane distortions due to the placement of the numerous absorber features are presented. With these models it is possible to predict the distortion of the membrane due to absorber features prior to the construction of the mask, allowing this modeling process to be used as a predictive tool to correct for pattern placement errors in the e-beam writing process.

Citation Download Citation

Adam H. Fisher, Roxann L. Engelstad, and Matthew F. Laudon "Membrane distortions in x-ray masks due to specific absorber features", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275771

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