Monte Carlo simulation of charging effects on linewidth metrology

Yeong-Uk Ko

doi:10.1117/12.275943

7 July 1997 Monte Carlo simulation of charging effects on linewidth metrology

Yeong-Uk Ko

Proceedings Volume 3050, Metrology, Inspection, and Process Control for Microlithography XI; (1997) https://doi.org/10.1117/12.275943
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The charging effects have been investigated when the linewidth of the insulator is measured by scanning electron microscope in secondary electron detection mode and with the low accelerating voltage around 1 kV. The yield of the electron generation is near the unity for most material under low voltage condition, and is slightly different from unity depending on the material and geometry of the pattern. For insulators, however, such a yield difference leads to locally different charge accumulation which influences on the measured linewidth. In this paper the influence of the charging effects on linewidth in PMMA/Si wafer is analyzed by Monte Carlo method as the operating condition and geometrical shape changes.

Citation Download Citation

Yeong-Uk Ko "Monte Carlo simulation of charging effects on linewidth metrology", Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); https://doi.org/10.1117/12.275943

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