Photoacoustic spectroscopy of photovoltaic materials

M. A. Slifkin; L. Lurie; Aryeh M. Weiss

doi:10.1117/12.281326

22 September 1997 Photoacoustic spectroscopy of photovoltaic materials

M. A. Slifkin, L. Lurie, Aryeh M. Weiss

Proceedings Volume 3110, 10th Meeting on Optical Engineering in Israel; (1997) https://doi.org/10.1117/12.281326
Event: 10th Meeting on Optical Engineering in Israel, 1997, Jerusalem, Israel

Abstract

A photoacoustic spectrometer is described which has been constructed to measure the spectra of photovoltaic materials in the ultra violet, visible and near infra red regions. The range of this photoacoustic spectrometer is from 0.3 to 1.8 micrometers. This technique has the advantage of being non- intrusive and non-destructive. Measurements have been made of a variety of photovoltaic materials, including a CdS/CuIn_{1- x}Ga_xSe₂ heterojunction and an InP/InGaAsP quantum well layer system. Bands arising from intrinsic impurity subgap levels were observed beyond the band edges.

Citation Download Citation

M. A. Slifkin, L. Lurie, and Aryeh M. Weiss "Photoacoustic spectroscopy of photovoltaic materials", Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); https://doi.org/10.1117/12.281326

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