Using advanced diagnostics to detect subsurface damage in sapphire

David R. Black; Linda M. Braun; Harold Burdette; Christopher J. Evans; Bernard J. Hockey; Robert S. Polvani; Grady S. White

doi:10.1117/12.295133

1 November 1997 Using advanced diagnostics to detect subsurface damage in sapphire

David R. Black, Linda M. Braun, Harold Burdette, Christopher J. Evans, Bernard J. Hockey, Robert S. Polvani, Grady S. White

Author Affiliations +

Proceedings Volume 3134, Optical Manufacturing and Testing II; (1997) https://doi.org/10.1117/12.295133
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

The microstructure of sapphire modulus of rupture bars has been examined before and after a high-temperature anneal using a variety of characterization methods, collectively described as 'advanced diagnostics'. These methods include the localized techniques of transmission electron microscopy, Raman spectroscopy and high magnification polarized light microscopy, as well as the global techniques of x-ray diffraction topography, polariscope and wave font analysis. Comparison of data before and after annealing indicate that no change has occurred in the long-range strain distribution or subgrain structure. However, changes in microstructure consistent with the motion of dislocations within approximately 100 nm of the surface were observed.

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David R. Black, Linda M. Braun, Harold Burdette, Christopher J. Evans, Bernard J. Hockey, Robert S. Polvani, and Grady S. White "Using advanced diagnostics to detect subsurface damage in sapphire", Proc. SPIE 3134, Optical Manufacturing and Testing II, (1 November 1997); https://doi.org/10.1117/12.295133

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