Ge vapor-phase doping of CdTe and Cd0.96Zn0.04Te crystals

P. Feichuk; L. Shcherbak; I. Omanchukivska

doi:10.1117/12.280464

26 August 1997 Ge vapor-phase doping of CdTe and Cd_0.96Zn_0.04Te crystals

P. Feichuk, L. Shcherbak, I. Omanchukivska

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280464
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The diffusion and solubility of Ge in CdTe and Cd_0.96 Zn_0.04 Te crystals at near saturated cadmium vapor pressure at 838 - 1108 K has been studied by radiometric and optical methods The influence of thermal etching process on Ge diffusion rate are discussed. The result suggest that local stress field in II-VI crystals are the sites where migrating Ge had been concentrated in separate phase form.

Citation Download Citation

P. Feichuk, L. Shcherbak, and I. Omanchukivska "Ge vapor-phase doping of CdTe and Cd_0.96Zn_0.04Te crystals", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280464

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