Irreversible gigantic modification of semiconductor optical properties

Alexander M. Kamuz; Pavel F. Oleksenko; T. A. Dyachenko

doi:10.1117/12.280452

26 August 1997 Irreversible gigantic modification of semiconductor optical properties

Alexander M. Kamuz, Pavel F. Oleksenko, T. A. Dyachenko

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280452
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The irreversible gigantic modification (IGM) occurs in semiconductors under simultaneous action of strongly polar liquid, acceptors dissolved in it, and optical radiation in the region of fundamental absorption. The IGM phenomenon is found by the authors in the III-V and II-VI compound semiconductors. During the IGM process the reflection and transmission coefficients are gradually varying in a modified near-surface semiconductor region. This enables to reduce controllably the real part of the complex refractive index in a near-surface semiconductor region, vary its chemical composition and the luminescence spectrum. After IGM the modified semiconductor with the velocity of 100 ms/mm. Increasing a distance between the controlling and controlled beams enables to implement a time delay between signal. The time delay up to 1.7 seconds has been achieved experimentally. We have used the IGM phenomenon to fabricate elements and devices of the integrated semiconductor optics. The IGM phenomenon enables to make antireflective optical elements.

Citation Download Citation

Alexander M. Kamuz, Pavel F. Oleksenko, and T. A. Dyachenko "Irreversible gigantic modification of semiconductor optical properties", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280452

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