Paper
26 August 1997 Laser molecular beam epitaxy of BaTiO3 thin films
Dafu Cui, Hui-sheng Wang, K. Ma, Zhenghao Chen, Yueliang Zhou, Huibin Lu, Lijuan Li, Guozhen Yang
Author Affiliations +
Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280465
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
Atomic-scale epitaxial BaTiO3 (BTO) thin films were grown on SrTiO3 (STO) substrate by computer-controlled laser molecular beam epitaxial system. The crystal quality, surface and interface microstructure of the laser MBE BTO thin film has been investigated by in-situ reflection high- energy electron diffraction, x-ray diffraction, transmission electron microscope and atomic force microscope. We find that the laser MBE BTO thin film prepared at ozone pressure of 10-6 Torr and at STO substrate temperature of 750 degrees C has highly c-axis oriented tetragonal phase and single crystal structure, the BTO/STO interface is abrupt, and the surface of the BTO thin film shows atomically smooth.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dafu Cui, Hui-sheng Wang, K. Ma, Zhenghao Chen, Yueliang Zhou, Huibin Lu, Lijuan Li, and Guozhen Yang "Laser molecular beam epitaxy of BaTiO3 thin films", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280465
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KEYWORDS
Thin films

Ferroelectric materials

Molecular beam epitaxy

Crystals

Laser crystals

Computing systems

Human-machine interfaces

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