Low-dimensional Si structures prepared by laser deposition

Sergey V. Svechnikov; E. B. Kaganovich; E. G. Manoilov; S. P. Dikiy

doi:10.1117/12.280433

26 August 1997 Low-dimensional Si structures prepared by laser deposition

Sergey V. Svechnikov, E. B. Kaganovich, E. G. Manoilov, S. P. Dikiy

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280433
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

One of possible attempt to get light emission out of silicon is to use low dimensional Si structures. There we report about nanocrystalline composite Si films with visible photoluminescence prepared by reactive pulsed laser deposition. We have examined the effects of nanocrystallite size and matrix composition on the optical properties. As a result, the structure of these composite films and superlattice based thereon have the ability of controlling the quantum size and consequently their optoelectronic properties.

Citation Download Citation

Sergey V. Svechnikov, E. B. Kaganovich, E. G. Manoilov, and S. P. Dikiy "Low-dimensional Si structures prepared by laser deposition", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280433

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