Photoelectric peculiarities and theoretical analysis of properties of thin semiconductor PbS films prepared by new spray method

Alexey N. Alyoshin; Alexander V. Burlak; Valeriy A. Pasternak; Alexander V. Tyurin

doi:10.1117/12.280436

26 August 1997 Photoelectric peculiarities and theoretical analysis of properties of thin semiconductor PbS films prepared by new spray method

Alexey N. Alyoshin, Alexander V. Burlak, Valeriy A. Pasternak, Alexander V. Tyurin

Author Affiliations +

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280436
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

PbS-based optical sensors are sensitive in the IR-region of the spectra and are important for a lot of applications in optoelectronic field. Photoelectric properties of thin polycrystal PbS films prepared by a new spray method have ben investigated. This method allows of a smooth change in the dosage of oxidant concentration in the initial solutions, which influences the parameters and characteristics of produced samples. Large scale temperature dependencies of dark and photo currents, volt-watt and volt- ampere characteristics, electron beam microscopy of films surface were investigated. A very low value of relaxation time of photoexcitation is the characteristic property of the prepared films. Volt-ampere characteristics of the dark current are superlinear at high voltage, and, in case of photo current, have a section of the negative differential conductivity. Calculated are the reduced chemical potentials for holes and electrons and its concentrations n, p and degeneration criteria (eta) _i for a row of temperatures: 4.2K, 77 K, 300 K. It was shown, that a hole gas is degenerated at low temperatures and particularly degenerated at room temperatures. Suggested is a model that explains experimental results by means of a concept of degeneration areas in 'noes' of inverse channels net and tunneling of minor carriers through oxidant barriers on crystallite borders. Furthermore, a diffusion length 1 and a transparency D for oxidant interlayers were calculated for different temperatures in accordance with barrier model. The tunnel component of dark current as a function of the supplied voltage was calculated theoretically. Analytical dependencies correlate well with experimental results.

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Alexey N. Alyoshin, Alexander V. Burlak, Valeriy A. Pasternak, and Alexander V. Tyurin "Photoelectric peculiarities and theoretical analysis of properties of thin semiconductor PbS films prepared by new spray method", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280436

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