Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage

Murat Okandan; Stephen J. Fonash; James Werking

doi:10.1117/12.284670

2 September 1997 Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage

Murat Okandan, Stephen J. Fonash, James Werking

Proceedings Volume 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing; (1997) https://doi.org/10.1117/12.284670
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

A new measurement technique for process monitoring that consists of observing current or charge transients after each voltage step during cyclic voltage sweeps is presented. This technique provides a quick turn-around alternative to monitoring with full-flow CMOS devices since it uses simple ultrathin oxide MOS structures. Analysis of the resulting cyclic I-V and Q-V data provides important physical information about the status of the ultrathin oxide, the interface and the near surface Si region.

Citation Download Citation

Murat Okandan, Stephen J. Fonash, and James Werking "Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); https://doi.org/10.1117/12.284670

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