Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy

Yong Ju Park; Cheol Koo Hahn; Kwang Mu Kim; Suk Koo Jung; Eun Kyu Kim; Suk-Ki Min

doi:10.1117/12.304494

8 April 1998 Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy

Yong Ju Park, Cheol Koo Hahn, Kwang Mu Kim, Suk Koo Jung, Eun Kyu Kim, Suk-Ki Min

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304494
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We have investigated the selective formation of In_xGa_1-xAs quantum dots by molecular beam epitaxy. Particularly, we report on selectivity formed In_xGa_1-xAs QDs on the GaAs(100) substrate with fine- patterned oxide layers such as gallium oxide and silicon oxide, which are prepared with electron bema lithography technique. The electron beam lithography pre-patterned oxide layers were used to assemble the dots in a specific region. Both of the oxide layers served as mask materials were compared for the better selective growth of self-assembled QDs. The migration and the desorption of the In and Ga adatoms on the oxide layers are considered to be the most important factors for the selective formation of In_xGa_1-xAs quantum dots by molecular beam epitaxy. The influences of the mole fractions of indium, the growth temperature and the growth interruption times on the morphological transformation from 2D to 3D structures were discussed. Particularly, the 2D arrays of quantum dots selectively formed on GaAs substrates with pre-patterned Ga₂O₃ oxide layer may eventually be used for novel electronic or optical devices.

Citation Download Citation

Yong Ju Park, Cheol Koo Hahn, Kwang Mu Kim, Suk Koo Jung, Eun Kyu Kim, and Suk-Ki Min "Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304494

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