ArF single-layer photoresists based on alkaline-developable ROMP-H resin

Mitsuhito Suwa; Haruo Iwasawa; Toru Kajita; Masafumi Yamamoto; Shin-Ichiro Iwanaga

doi:10.1117/12.312419

29 June 1998 ArF single-layer photoresists based on alkaline-developable ROMP-H resin

Mitsuhito Suwa, Haruo Iwasawa, Toru Kajita, Masafumi Yamamoto, Shin-Ichiro Iwanaga

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312419
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Novel ArF single layer photoresists, which are based on new type of alicyclic polymers prepared by ROMP (Ring Opening Metathesis Polymerization), are reported. Norbornenes with ester group were mainly used as monomers for polymerization. The prepared resins were potentially endowed with alkaline developability by hydrolyzing the ester groups. Hydrolyzed resins showed developability to conventional aqueous TMAH developer. The polymerized resins were hydrogenated onto the double bonds in the polymer main chain in order to improve the transparency of the resins at 193-nm. The hydrogenated ROMP (ROMP-H) resins showed high transparency at 193-nm and equivalently good etch resistance to that of KrF deep UV resist. The formulated resist with a ROMP-H resin and triphenyl sulfonium trifluoromethanesulfonate resolved 0.28- micrometers L/S in KrF exposure (N.A. equals 0.50) and 0.225-micrometers L/S in ArF exposure (N.A. equals 0.55).

Citation Download Citation

Mitsuhito Suwa, Haruo Iwasawa, Toru Kajita, Masafumi Yamamoto, and Shin-Ichiro Iwanaga "ArF single-layer photoresists based on alkaline-developable ROMP-H resin", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312419

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