Influence of salting-out effect in ArF resist development

Yasuhiro Yoshida; Teruhiko Kumada; Atsuko Sasahara; Atsushi Oshida; Hiroshi Adachi

doi:10.1117/12.312464

29 June 1998 Influence of salting-out effect in ArF resist development

Yasuhiro Yoshida, Teruhiko Kumada, Atsuko Sasahara, Atsushi Oshida, Hiroshi Adachi

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312464
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Acrylic polymers are used for the ArF resists due to their high transparency. The development behaviors of the resists remarkably differ from that of conventional phenol resists. We investigated the influence of the ions in the developer and rinse to the development. The behaviors are explained clearly by considering the salting out effect. An exposed resist does not dissolve completely and forms gel by the salting out effect during the development, especially when the exposure is insufficient. This gel is dissolved by the rinse in which the salting out effect is very weak. The salting out effect also has influence to the unexposed resist. During the development, the diffusion of TMAH into the resist film occurs, while the swelling of the resist is inhibited by the salting out effect. The removal of the resist is observed occasionally during the rinse. A molecule of the ArF resists contains highly hydrophilic parts with the photogenerated carboxylic acid and hydrophobic parts. This type of molecule easily makes gel during the dissolution because the hydrophilic parts introduces the water and the hydrophobic parts make crosslinks of hydrophobic bonds. The hydrophobic bonds are influenced by the ions. This is because the acrylic resists are easy to be influenced by the salting out effect.

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Yasuhiro Yoshida, Teruhiko Kumada, Atsuko Sasahara, Atsushi Oshida, and Hiroshi Adachi "Influence of salting-out effect in ArF resist development", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312464

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KEYWORDS

Polymers

Ions

Molecules

Diffusion

Chlorine

Lithography

Semiconducting wafers

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