Paper
14 September 1998 Bound-to-delocalized-state transition in a strong nonresonance laser field
Vladimir K. Mukhomorov
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Abstract
By using Kramers-Henneberger unitary transformation, the rapidly oscillating perturbation is transposed to the argument of a potential function. It is shown that the depth of the potential-energy well in which the electron is localized decreases monotonically with an increase in the strength of the external field. The analytic technique of a shifted 1/N expansion was used to express the position of the ground energy level as a function of the external-source intensity. The critical value of a parameter characterizing the external source is found for which the ground bound quasi-discrete electron level vanishes. The localized-to-delocalized-state transition is identifying as a diffuse nonmetal-metal phase transition.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir K. Mukhomorov "Bound-to-delocalized-state transition in a strong nonresonance laser field", Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); https://doi.org/10.1117/12.321525
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KEYWORDS
Polarization

Dielectrics

Dielectric polarization

Phonons

Adaptive optics

Electron transport

Particles

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