Cryogenic MOST for focal plane readout electronics

Nikolai E. Bock; Evgeny I. Cherepov

doi:10.1117/12.321757

14 September 1998 Cryogenic MOST for focal plane readout electronics

Nikolai E. Bock, Evgeny I. Cherepov

Proceedings Volume 3360, Infrared Readout Electronics IV; (1998) https://doi.org/10.1117/12.321757
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

At temperatures below 20K conventional MOS transistors continue to work, but excessive noise and current-voltage anomalies such as kink effect and hysteresis appear on their output characteristics because of carrier freeze-out in silicon. A cryogenic MOS transistor was proposed to prevent the anomalies. The paper describes the cryogenic transistor structure, its performance and the result of its application in a 64 by 1 CMOS multiplexer.

Citation Download Citation

Nikolai E. Bock and Evgeny I. Cherepov "Cryogenic MOST for focal plane readout electronics", Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); https://doi.org/10.1117/12.321757

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