Forward-tunneling current voltage characteristics of HgCdTe p-on-n photodiodes

Xiangyang Li; Jun Zhao; Huiqin Lu; Jiaxiong Fang; Yueyuan Xia

doi:10.1117/12.317629

22 July 1998 Forward-tunneling current voltage characteristics of HgCdTe p-on-n photodiodes

Xiangyang Li, Jun Zhao, Huiqin Lu, Jiaxiong Fang, Yueyuan Xia

Proceedings Volume 3379, Infrared Detectors and Focal Plane Arrays V; (1998) https://doi.org/10.1117/12.317629
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

Current-voltage characteristics of narrow-gap HgCdTe p-on-n photodiodes at different temperatures have been investigated. Forward tunneling current is seen in a certain forward bias region. A constant-current mode was also used to identify the trap-assistant tunneling, and the results show this forward tunneling current influences the zero bias resistance. Ideality factors, calculated from current-voltage experimental data, show a peak in the intermediate forward bias region. The height of peak in ideality factor decreases as the temperature increases. This peak is thought due to the multi-step tunneling current.

Citation Download Citation

Xiangyang Li, Jun Zhao, Huiqin Lu, Jiaxiong Fang, and Yueyuan Xia "Forward-tunneling current voltage characteristics of HgCdTe p-on-n photodiodes", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); https://doi.org/10.1117/12.317629

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