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22 June 1998 MOCVD technology for the production of highly efficient GaAlP/GaAs/Ge solar cells
Rainer Beccard, Harry Protzmann, Dietmar A. Schmitz, Gert Strauch, Michael Heuken, Holger Juergensen
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190A (1998) https://doi.org/10.1117/12.310992
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
Since the invention of the Planetary Reactors a reliable tool for mass production of various III-V compounds is existing. These reactors have proven to grow extremely uniform films together with a highly efficient utilization of the precursors. Now a new generation of Planetary Reactors is introduced: the so-called G3 systems. Their main features are: an inductive heating system with extremely low thermal mass for precise and fast heating, high flexibility in the reactor size and the option to use a fully automated cassette-to-cassette wafer loading system. The benefits of this new design are very short cycle times, extreme run-to- run stability and even further reduced cost of ownership. We will present comprehensive data concerning growth of GaAs, AlGaAs, GaInP, AlGaInP and other III-V materials. Special focus will be put on uniformity, efficiency and electrical and optical characteristics of films grown in these machines. The data prove that the G3 systems are the most flexible and efficient reactors to meet the demands of solar cell production for the next decade.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Rainer Beccard, Harry Protzmann, Dietmar A. Schmitz, Gert Strauch, Michael Heuken, and Holger Juergensen "MOCVD technology for the production of highly efficient GaAlP/GaAs/Ge solar cells", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190A (22 June 1998); https://doi.org/10.1117/12.310992
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KEYWORDS
Solar cells
Metalorganic chemical vapor deposition
Aluminium gallium indium phosphide
Gallium arsenide
Indium gallium phosphide
Semiconducting wafers
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