Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers

Marek Osinski; Vladimir A. Smagley; Gennady A. Smolyakov; Tengiz Svimonishvili; Petr Georgievich Eliseev; George J. Simonis

doi:10.1117/12.311010

22 June 1998 Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers

Marek Osinski, Vladimir A. Smagley, Gennady A. Smolyakov, Tengiz Svimonishvili, Petr Georgievich Eliseev, George J. Simonis

Author Affiliations +

Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190Q (1998) https://doi.org/10.1117/12.311010
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Several vertical-cavity surface-emitting laser (VCSEL) structures are investigated by means of 3D steady-state electrical-thermal-optical numerical modeling. Electrical and thermal models are coupled via: (i) heat generation by current passing through the diode; (ii) temperature dependence of the diffusion potential of the junction; and (iii) temperature dependence of the bulk resistivity of passive material at both sides of the junction. Optical waveguide model is coupled to electrical-thermal model through position-dependent carrier recombination lifetime and temperature-dependent refractive-index. Simulation is performed for cylindrically symmetric two-sided oxide- confined intracavity-contact VCSELs. For comparison purposes, numerical data are acquired for materially identical bottom-emitting mesa laser and p-side intracavity- contact VCSEL. Nonuniformity of the main device characteristics is studied. Several different phenomena are shown to contribute to nonuniformity: (i) current crowding due to device geometry; (ii) current crowding induced by stimulated emission processes; (iii) current spreading related to oxide positioning; (iv) temperature related effects.

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Marek Osinski, Vladimir A. Smagley, Gennady A. Smolyakov, Tengiz Svimonishvili, Petr Georgievich Eliseev, and George J. Simonis "Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190Q (22 June 1998); https://doi.org/10.1117/12.311010

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