Paper
10 November 1998 Intrinsic 1/f noise in doped silicon thermistors for cryogenic calorimeters
S. I. Han, R. Almy, E. Apodaca, W. M. Bergmann Tiest, Steven W. Deiker, A. Lesser, Dan McCammon, K. Rawlins, Richard L. Kelley, Samuel Harvey Moseley Jr., Frederick Scott Porter, Caroline Kilbourn Stahle, Andrew E. Szymkowiak
Author Affiliations +
Abstract
We have characterized the intrinsic 1/f noise of ion- implanted silicon thermistors in the 0.05-0.5 K temperature range. This noise can have a significant effect on detector performance and needs to be taken into account in the design optimization of IR bolometers and x-ray microcalorimeters. The noise can be reasonably well fit as (Delta) R/R fluctuations whose spectral density varies as 1/f and increases steeply with lower doping density and lower temperatures. The observed 1/f noise can be approximated as a resistance fluctuations.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. I. Han, R. Almy, E. Apodaca, W. M. Bergmann Tiest, Steven W. Deiker, A. Lesser, Dan McCammon, K. Rawlins, Richard L. Kelley, Samuel Harvey Moseley Jr., Frederick Scott Porter, Caroline Kilbourn Stahle, and Andrew E. Szymkowiak "Intrinsic 1/f noise in doped silicon thermistors for cryogenic calorimeters", Proc. SPIE 3445, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX, (10 November 1998); https://doi.org/10.1117/12.330329
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Cited by 17 scholarly publications.
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KEYWORDS
Resistance

Sensors

Silicon

Temperature metrology

Doping

Sensor performance

Cryogenics

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