Growth and properties of semi-insulating CdZnTe for radiation detector applications

Csaba Szeles; Michael C. Driver

doi:10.1117/12.312878

1 July 1998 Growth and properties of semi-insulating CdZnTe for radiation detector applications

Csaba Szeles, Michael C. Driver

Proceedings Volume 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications; (1998) https://doi.org/10.1117/12.312878
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

The growth and properties of semi-insulating CdZnTe for nuclear radiation detector applications are reviewed. The current state of the high-pressure Bridgman growth and the potentials of the conventional vertical and horizontal Bridgman techniques to grow radiation detector material are discussed. The characteristic macroscopic and microscopic defects of high-pressure Bridgman grown CdZnTe ingots, such as cracks, pipes, inclusions, precipitates, grain boundaries and their effect on the electrical and charge trapping properties of the material are reviewed.

Citation Download Citation

Csaba Szeles and Michael C. Driver "Growth and properties of semi-insulating CdZnTe for radiation detector applications", Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); https://doi.org/10.1117/12.312878

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