Utility of electronic transitions of doped semiconductors for measuring dielectric constant

M. M. Pradhan; Manju Arora

doi:10.1117/12.331132

13 November 1998 Utility of electronic transitions of doped semiconductors for measuring dielectric constant

M. M. Pradhan, Manju Arora

Proceedings Volume 3465, Millimeter and Submillimeter Waves IV; (1998) https://doi.org/10.1117/12.331132
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

At liquid helium temperatures, electronic transitions are observed in doped semiconductors in the far infrared region. High resolution FTIR spectroscopy has been found quite useful to resolve these transitions. At ambient temperature, free charge carriers have high mobility, but near liquid helium temperatures, the electrons or holes are frozen and become loosely bound to the defect centers. Thus the behavior of ionized carriers is explained by pseudo-Bohr or hydrogen like model. In P-doped silicon electronic transitions have been resolved from ground (1s) state of phosphorus impurity to excited state of electronic levels 3p+/- and 2p+/- in the far infrared region. Using Faulkner expressions for binding energies of excited p levels, the dielectric constant of P- doped silicon has been measured at liquid helium temperatures. The precise measurements of FTIR spectroscopy show small variations of frequency of these transitions from 6K to 50K, which results in the corresponding variation in the dielectric constant at these temperatures.

Citation Download Citation

M. M. Pradhan and Manju Arora "Utility of electronic transitions of doped semiconductors for measuring dielectric constant", Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); https://doi.org/10.1117/12.331132

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