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This paper describes our recent progress in MBE growth and the surface/interface investigation of high-Tc superconducting films. The careful XPS analyses of the in-situ surface and interface reaction for MBE grown (Nd,Ce)2CuO4 films demonstrate that correct oxygen stoichiometry is the most crucial issue in preparing high-quality films and improving the characteristics of tunnel junctions. In other words, oxygen nonstoichiometry easily occurs at the surface or interface in cuprates. By utilizing this fact in a positive way, we have succeeded in preparing of the highest quality La2CuO4+(delta ) films ever and have discovered a new superconducting Ba2CuO4-(delta ) film by a simple and efficient oxidation process using ozone in a vacuum chamber.
Michio Naito,Hisashi Sato, andHideki Yamamoto
"Oxygen nonstoichiometry of MBE-grown cuprate films to lose or give high-Tc superconductivity", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335878
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Michio Naito, Hisashi Sato, Hideki Yamamoto, "Oxygen nonstoichiometry of MBE-grown cuprate films to lose or give high-Tc superconductivity," Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335878