RF- and dc-plasma-assisted laser deposition of a-CNx thin films

Rumen I. Tomov; Miroslav Jelinek; Jiri Bulir

doi:10.1117/12.347649

7 May 1999 RF- and dc-plasma-assisted laser deposition of a-CN_x thin films

Rumen I. Tomov, Miroslav Jelinek, Jiri Bulir

Proceedings Volume 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications; (1999) https://doi.org/10.1117/12.347649
Event: 10th International School on Quantum Electronics: Lasers: Physics and Applications, 1998, Varna, Bulgaria

Abstract

Carbon nitride thin films are candidates for various technological applications. Special kind of a-Cn_x film, as (beta) -C₃N₄, is supposed to be material exhibiting extreme hardness--higher than diamond. Many groups are trying to synthesize a-CN_x films (with goal of creation (beta) -C₃N₄ phase), but concentration of nitrogen in films is still low. We have created series of nitrogenated amorphous carbon films in nitrogen atmosphere from graphite target by pulsed laser deposition. Additional DC and RF discharges were ignited in order to increase the reactivity of the nitrogen. Film properties were analyzed by X-ray diffraction and spectroscopic ellipsometry. The effects of the discharges on the C-N stoichiometry and on chemical bonding were studied. The N/C ratio increased with higher RF and DC plasma densities up to value of 0.25. Maximum values were reached at the nitrogen pressure twice lower for rf discharge than dc discharge assisted deposition. C-N stoichiometry and chemical bonding were investigated by Fourier transform infrared spectroscopy, X- ray Photoelectron Spectroscopy and Raman spectroscopy. Only films deposited at higher rf plasma power density showed the presence of triple bonded C equalsV N stretching mode.

Citation Download Citation

Rumen I. Tomov, Miroslav Jelinek, and Jiri Bulir "RF- and dc-plasma-assisted laser deposition of a-CN_x thin films", Proc. SPIE 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications, (7 May 1999); https://doi.org/10.1117/12.347649

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