Paper
1 April 1999 Nonabsorbing mirrors for AlGaAs quantum well lasers by impurity-free interdiffusion
Philippe Collot, Julia Arias, Virginie Mira, Eva Vassilakis, Francois H. Julien
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Abstract
Impurity-free vacancy disordering (IFVD) was used to elaborate AlGaAs quantum-well (QW) laser diodes with non-absorbing mirror (NAM) facets to rise the catastrophic optical mirror degradation (COMD) threshold. Prior to laser processing, blueshifted emission windows were formed by rapid thermal annealing at 930 degrees Celsius below SiO2 cap layers. The photoluminescence (PL) energy blueshift measured between active and window regions is around 30 meV, with no degradation on the PL signal. Active region, free of SiO2 encapsulation, exhibits however a non-negligible PL blueshift which is attributed to an internal interdiffusion process. This effect seems to be related to the silicon doping of the n-type AlGaAs cladding layer. 120-micrometer-aperture broad area lasers were fabricated both with and without 25 micrometer NAM sections on both sides. COMD was measured under pulsed operation (50 microsecond(s) - 100 Hz) using an epi-side-up mounting configuration. Uncoated NAM facets exhibit, on the average, a COMD threshold 1.5 times higher than that of standard ones: we achieved by this way a maximum peak power of 2 W from a 782-nm emitting laser.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philippe Collot, Julia Arias, Virginie Mira, Eva Vassilakis, and Francois H. Julien "Nonabsorbing mirrors for AlGaAs quantum well lasers by impurity-free interdiffusion", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344522
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Cited by 3 scholarly publications.
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KEYWORDS
Quantum wells

Nonabsorbing mirrors

Semiconductor lasers

Silicon

Doping

Pulsed laser operation

Annealing

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