Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors

Honnavalli R. Vydyanath; Vaidya Nathan; Latika S. R. Becker; Gary N. Chambers

doi:10.1117/12.344589

7 April 1999 Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors

Honnavalli R. Vydyanath, Vaidya Nathan, Latika S. R. Becker, Gary N. Chambers

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344589
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Mechanisms of incorporation of native defect and dopants in HgCdTe alloys are reviewed. Origin of the native defect related deep centers in limiting the minority carrier lifetime is explored. Primary and secondary mechanisms operative in the activation of n type and p type dopants in HgCdTe are discussed along with implications for fabrication of high performance detectors.

Citation Download Citation

Honnavalli R. Vydyanath, Vaidya Nathan, Latika S. R. Becker, and Gary N. Chambers "Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344589

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available