Paper
14 June 1999 Multiple CD-SEM matching for 0.18-μm lines/spaces at different exposure conditions
Andre Engelen, Ingrid Minnaert-Janssen
Author Affiliations +
Abstract
CD-SEMs are used within ASML for evaluating the imaging performance of Stepper and Step and Scan systems. This implies measuring a large number of focus exposure matrices and inter/intra-field CD measurements on different CD-SEMs. Therefore the CD-SEMs in ASML are matched through focus. The matching procedure is done on three steps. First, all CD- SEMs are checked for stability. Then the magnification factor for each of the individual CD-SEMs is checked in order to make sure that he tool is set up correctly. Finally, the CD measurements are matched through focus and multiple exposure energies. In this paper, we will show that the CD-SEMs of different vendors can be matched using photoresist features, through focus within 5 nm for 0.18 micrometers features. This matching includes different orientations and densities using only one correction offset.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre Engelen and Ingrid Minnaert-Janssen "Multiple CD-SEM matching for 0.18-μm lines/spaces at different exposure conditions", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350817
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KEYWORDS
Critical dimension metrology

Finite element methods

Photoresist materials

Semiconducting wafers

Contamination

Time metrology

Calibration

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