Paper
11 June 1999 Considerations for the use of application-specific photoresists
John L. Sturtevant, Benjamin C. P. Ho, Kevin D. Lucas, John S. Petersen, Chris A. Mack, Edward W. Charrier, William C. Peterson, Nobu Koshiba, Gregg A. Barnes
Author Affiliations +
Abstract
In recent years, photoresists suppliers have migrated to offering a full palette of resist chemistries and processes which are specifically tailored for particular pattern types and/or exposure processes. Thus we now see designations such as 'contact resists', 'isolated line resists', 'dense line resists', 'attenuated phase shift resist', etc. This specialization offers the lithographer more choices for continual performance improvement and optimization, but implementation of multiple resist platforms in manufacturing can be problematic. In this paper, we examine the design criteria and efficacy of pattern- and application-specific photoresist versus a generic 'multi-purpose' material, and identify some of the trade-offs which can be expected when employing these resists. Generalized ideal resist behaviors are presented for different pattern criteria, including proximity bias. Both experimental and simulation results are given.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John L. Sturtevant, Benjamin C. P. Ho, Kevin D. Lucas, John S. Petersen, Chris A. Mack, Edward W. Charrier, William C. Peterson, Nobu Koshiba, and Gregg A. Barnes "Considerations for the use of application-specific photoresists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350217
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KEYWORDS
Photoresist materials

Deep ultraviolet

Photoresist processing

Logic

Metals

Chemistry

Manufacturing

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