Correlations between dissolution data and lithography of various resists

Ronald DellaGuardia; Wu-Song Huang; K. Rex Chen; Doris Kang

doi:10.1117/12.350215

11 June 1999 Correlations between dissolution data and lithography of various resists

Ronald DellaGuardia, Wu-Song Huang, K. Rex Chen, Doris Kang

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350215
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The fundamental basis of resist performance in semiconductor lithography is the creation of a dissolution gradient in the resist film. For positive resists the dissolution rate (DR) and dissolution characteristics of the exposed as well as unexposed regions are important factors in determining the performance of the resist. Since the establishment of the dissolution rate curve as a method for evaluating photographic materials, many investigators have tried to correlate dissolution rate data with lithographic performance in a systematic way.

Citation Download Citation

Ronald DellaGuardia, Wu-Song Huang, K. Rex Chen, and Doris Kang "Correlations between dissolution data and lithography of various resists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350215

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