Paper
11 June 1999 Resist outgassing as a function of differing photoadditives
Francis M. Houlihan, Ilya L. Rushkin, Richard S. Hutton, Allen G. Timko, Omkaram Nalamasu, Elsa Reichmanis, Allen H. Gabor, Arturo N. Medina, Sanjay Malik, M. Neiser, Roderick R. Kunz, Deanna K. Downs
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Abstract
The effect of different photoadditives in high and low activation energy resist resins on resist outgassing during lithographic exposure was studied by quartz microbalance and gas chromatography/mass spectroscopy techniques. The resist outgassing was analyzed both qualitatively and quantitatively and structure-property relationships were developed between resist outgassing and the molecular structure of photoacid generators and additives. The photoadditives examined include, aryl iodonium perfluoroalkylsulfonates, triarylsulfonium perfluoroakylsulfonates, photogenerators of sulfamic acids, 2-nitrobenzyl PAG's and doxyl derivatives.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francis M. Houlihan, Ilya L. Rushkin, Richard S. Hutton, Allen G. Timko, Omkaram Nalamasu, Elsa Reichmanis, Allen H. Gabor, Arturo N. Medina, Sanjay Malik, M. Neiser, Roderick R. Kunz, and Deanna K. Downs "Resist outgassing as a function of differing photoadditives", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350209
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Cited by 9 scholarly publications.
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KEYWORDS
Lithography

Chromophores

Photolysis

NOx

Diffusion

Polymers

Deep ultraviolet

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