193-nm lithography on a full-field scanner

Anne-Marie Goethals; Ingrid Pollers; Patrick Jaenen; Frieda Van Roey; Kurt G. Ronse; Barbra Heskamp; Guy Davies

doi:10.1117/12.354340

26 July 1999 193-nm lithography on a full-field scanner

Anne-Marie Goethals, Ingrid Pollers, Patrick Jaenen, Frieda Van Roey, Kurt G. Ronse, Barbra Heskamp, Guy Davies

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354340
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

In this paper, the lithographic performance of advanced 193 nm resist materials has been evaluated on a full field step and scan system. Single layer and bi-layer resist processes are compared in terms of performance and complexity. Optimization of illumination conditions is investigated as a way to enlarge processing windows and to reduce iso-dense bias. The application of a PSM illustrates the extendibility of 193 nm lithography for the 100- nm technology node.

Citation Download Citation

Anne-Marie Goethals, Ingrid Pollers, Patrick Jaenen, Frieda Van Roey, Kurt G. Ronse, Barbra Heskamp, and Guy Davies "193-nm lithography on a full-field scanner", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354340

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