Characterization of silicon cantilevers with integrated pyramidal metal tips in atomic force microscopy

Thomas Hantschel; Robert Stephenson; Thomas Trenkler; Peter De Wolf; Wilfried Vandervorst

doi:10.1117/12.341168

10 March 1999 Characterization of silicon cantilevers with integrated pyramidal metal tips in atomic force microscopy

Thomas Hantschel, Robert Stephenson, Thomas Trenkler, Peter De Wolf, Wilfried Vandervorst

Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341168
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France

Abstract

Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) are two different methods for carrier profiling on semiconductor devices based on the atomic force microscope (AFM). The crucial part of these characterization tools is the tip which should have a small radius of curvature and a high electrical conductivity. Therefore, we have developed a process for the fabrication of pyramidal metal tips which are integrated into a silicon cantilever. The fabrication scheme is presented and is discussed in more detail from the point of view of batch fabrication. The fabricated probes were used in the AFM for topography measurements and for electrical measurements. We demonstrate that these probes can be operated in contact mode as well as in tapping mode. The behavior of the metal tips in carrier profiling was extensively studied. Results are presented concerning the application of such probes for 2D SCM measurements on silicon and InP device structures. We demonstrate that silicon cantilevers with integrated metal tips are very well studied for SSRM measurements on InP structures.

Citation Download Citation

Thomas Hantschel, Robert Stephenson, Thomas Trenkler, Peter De Wolf, and Wilfried Vandervorst "Characterization of silicon cantilevers with integrated pyramidal metal tips in atomic force microscopy", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341168

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