Displacement threshold energies of impurity atoms in GaAs heterostructures

Boris J. Ber; Yuri A. Kudrjavtsev; Vladimir S. Kharlamov; Yuri V. Trushin; Evgeni E. Zhurkin

doi:10.1117/12.347435

5 May 1999 Displacement threshold energies of impurity atoms in GaAs heterostructures

Boris J. Ber, Yuri A. Kudrjavtsev, Vladimir S. Kharlamov, Yuri V. Trushin, Evgeni E. Zhurkin

Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347435
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation

Abstract

The new approach for the determination of displacement threshold energies (E_d) of impurity atoms in multicomponent targets has been proposed. The approach combines an experimental SIMS-profiling technique and a computer simulation by a dynamic DYTRIRS code. The developed approach was applied for the determination of E_d the for Al and In impurity atoms in GaAs targets.

Citation Download Citation

Boris J. Ber, Yuri A. Kudrjavtsev, Vladimir S. Kharlamov, Yuri V. Trushin, and Evgeni E. Zhurkin "Displacement threshold energies of impurity atoms in GaAs heterostructures", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); https://doi.org/10.1117/12.347435

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