Resistive YBaCuO microbolometers for infrared imaging applications

Linh Phong Ngo; S. N. Qiu; Bruno Tremblay

doi:10.1117/12.347719

7 May 1999 Resistive YBaCuO microbolometers for infrared imaging applications

Linh Phong Ngo, S. N. Qiu, Bruno Tremblay

Proceedings Volume 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99); (1999) https://doi.org/10.1117/12.347719
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '99), 1999, Yokohama, Japan

Abstract

Details of the fabrication process and figures of merit of resistive YBaCuO micro bolometers are reported. Thin films of YBaCuO were prepared on Si wafers under conditions that promote formation of the semi-conducting phase at room temperatures. Effects of the preparation conditions on activation energy of YBaCuO were studied to obtain films with a large temperature coefficient of resistance (TCR). TCR with values of up to 0.04 K^-1 was achieved uniformly on 10- cm wide wafer areas. Bulk micromachining was used to create 60 X 60 micrometer² bolometers on Si₃N₄ bridges with a thermal conductance of approximately 7.6 X 10^-7 W/K. The low frequency responsivity and detectivity of the micro bolometers were respectively approximately 7 X 10⁴ V/W and 3 X 10⁹ cm.Hz^1/2/W at room temperatures. These figures compare favorably with figures of other classes of un-cooled micro bolometer and are consistent with those derived from thermal properties of the bridge. Under normal operating conditions and assuming f/1.0 optics, the NETD of focal planes that make use of these micro bolometers was estimated to be less than 50 mK in the spectral range of 8 to 14 micrometer.

Citation Download Citation

Linh Phong Ngo, S. N. Qiu, and Bruno Tremblay "Resistive YBaCuO microbolometers for infrared imaging applications", Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); https://doi.org/10.1117/12.347719

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