Paper
19 October 1999 Small-sized gamma-ray probe operating under high fluxes, incorporating a radiation-resistant silicon detector
Anne Kazandjian, Vincent Prat, Herve Simon
Author Affiliations +
Abstract
In several fields of the nuclear industry, high fluxes of gamma radiations have to be measured. The small size of semiconductor detectors would be a good approach; however, in general degraded by the radiations. To overcome these difficulties, highly radiation-resistant silicon detectors have been developed for the measurements of high fluxes of gamma-rays, as encountered for example during in situ measurements in reactors. The detector is mounted in a waterproof 8.0 mm diameter probe, incorporating also all the electronics. The system can operate in two modes: either as counter of individual pulses generated by the radiations, or direct measurement of the induced d.c. current. In the first situation, the sensor operates as photodiode, whereas in the second case, photovoltaics mode is selected, i.e. without any applied bias voltage. When operating in the counter mode, a linear response over eight orders of magnitude of the flux can be measured, in the photovoltaics mode, the dark current limits the lower flux to values of about 5- 10.10-2 Gyh-1.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anne Kazandjian, Vincent Prat, and Herve Simon "Small-sized gamma-ray probe operating under high fluxes, incorporating a radiation-resistant silicon detector", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366607
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Silicon

Gamma radiation

Diodes

Electronics

Solar energy

Semiconductors

RELATED CONTENT

X-ray detectors based on GaN
Proceedings of SPIE (March 04 2013)
Polycrystalline Silicon Solar Cells
Proceedings of SPIE (November 25 1980)
Multiplexed avalanche photodiode arrays
Proceedings of SPIE (December 18 2000)
Ultrafast Surface Barrier Photodetectors
Proceedings of SPIE (October 06 1986)

Back to Top