Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications

Benjamin V. Shanabrook; W. Barvosa-Carter; Robert Bass; Brian Robert Bennett; J. Brad Boos; William W. Bewley; Allan S. Bracker; James C. Culbertson; E. R. Glaser; Walter Kruppa; R. Magno; W. J. Moore; Jerry R. Meyer; B. Z. Nosho; Doewon Park; P. M. Thibado; M. E. Twigg; R. J. Wagner; James R. Waterman; Lloyd J. Whitman; Ming Jey Yang

doi:10.1117/12.351249

30 June 1999 Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications

Benjamin V. Shanabrook, W. Barvosa-Carter, Robert Bass, Brian Robert Bennett, J. Brad Boos, William W. Bewley, Allan S. Bracker, James C. Culbertson, E. R. Glaser, Walter Kruppa, R. Magno, W. J. Moore, Jerry R. Meyer, B. Z. Nosho, Doewon Park, P. M. Thibado, M. E. Twigg, R. J. Wagner, James R. Waterman, Lloyd J. Whitman, Ming Jey Yang

Author Affiliations +

Proceedings Volume 3790, Engineered Nanostructural Films and Materials; (1999) https://doi.org/10.1117/12.351249
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Heterostructures formed from III-V semiconductors with the 6.1 angstroms lattice spacing (InAs, GaSb, AlSb and related alloys) have attracted significant interest because of their potential to define a new `state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 angstroms-based devices which have the potential to revolutionize infrared optoelectronics and low-power, high- speed electronics.

Citation Download Citation

Benjamin V. Shanabrook, W. Barvosa-Carter, Robert Bass, Brian Robert Bennett, J. Brad Boos, William W. Bewley, Allan S. Bracker, James C. Culbertson, E. R. Glaser, Walter Kruppa, R. Magno, W. J. Moore, Jerry R. Meyer, B. Z. Nosho, Doewon Park, P. M. Thibado, M. E. Twigg, R. J. Wagner, James R. Waterman, Lloyd J. Whitman, and Ming Jey Yang "Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications", Proc. SPIE 3790, Engineered Nanostructural Films and Materials, (30 June 1999); https://doi.org/10.1117/12.351249

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