Experimental and numerical analysis of the segregation phenomena in manganese-doped gallium antimonide

Jose Luis Plaza; Ernesto Dieguez

doi:10.1117/12.351267

6 July 1999 Experimental and numerical analysis of the segregation phenomena in manganese-doped gallium antimonide

Jose Luis Plaza, Ernesto Dieguez

Proceedings Volume 3792, Materials Research in Low Gravity II; (1999) https://doi.org/10.1117/12.351267
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

In this work, manganese segregation in vertical Bridgman- grown GaSb crystals has been investigated for different ampule diameters and several growth conditions. Experimental data of their impurity distribution from atomic absorption spectroscopy and Hall measurements have been obtained and compared with numerical analysis carried out with the finite element commercial program.

Citation Download Citation

Jose Luis Plaza and Ernesto Dieguez "Experimental and numerical analysis of the segregation phenomena in manganese-doped gallium antimonide", Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); https://doi.org/10.1117/12.351267

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