Paper
1 October 1999 High-aspect-ratio submicron microstructures in LiNbO3: fabrication and potential applications to photonic devices
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Abstract
Fabrication of high aspect ratio submicron to nanometer range micro structures in LiNbO3 using a state of the art Schlumberger AMS 3000 focused ion beam system is presented. The submicron structures with about 350 nm width and 1600 nm depth are fabricated by employing XeF2 gas assisted Gallium ion beam etching with 50 pA of ion beam current. A variety of opto-electronic devices such as micro sensors, directional couplers, extremely compact electro- optic modulators and wavelength filters could be built based on this type of high aspect ratio submicron structures in LiNbO3, which may lead to the next generation of integrated opto-electronic devices that have higher levels of device integration and enhanced functionality.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shizhuo Yin "High-aspect-ratio submicron microstructures in LiNbO3: fabrication and potential applications to photonic devices", Proc. SPIE 3805, Photonic Devices and Algorithms for Computing, (1 October 1999); https://doi.org/10.1117/12.364007
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KEYWORDS
Etching

Ion beams

Optoelectronics

Ions

Photonic devices

Electrooptic modulators

Gallium

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