Paper
3 September 1999 Characterization of the CMP process by atomic force profilometry
Larry M. Ge, Dean J. Dawson
Author Affiliations +
Abstract
We demonstrate the measurement capabilities of the newly developed Atomic Force Profiler (AFP) as a CMP process metrology tool. AFP combines a TappingMode atomic force microscopy (AFM) with a long scan profiler stage and can be used to characterize post-CMP local and global planarization for current and future generations of device manufacturing. The AFP enables CMP measurements of dishing, erosion, plug recess, and surface texture, providing adequate lateral resolution to image individual deep sub-micron device features as well as capability to profile long scans across multiple dies. In this paper we demonstrate that AFP can be used for the process development and production monitoring of metal CMP. Automated measurement of deep sub-micron W plug recess/protrusion, damascene Cu lines recess/protrusion, as well as erosion due to W or Cu structures is presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry M. Ge and Dean J. Dawson "Characterization of the CMP process by atomic force profilometry", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361298
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Cited by 1 scholarly publication.
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KEYWORDS
Copper

Chemical mechanical planarization

Semiconducting wafers

Profiling

Atomic force microscopy

Image resolution

Metrology

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