Optimizing the clean effect of wafer backside in lithography developer process

Hsun-Peng Lin; Chun-Hong Chang; Chih-Hsiung Lee; Sheng-Liang Pang; Kuo-Liang Lu

doi:10.1117/12.361309

3 September 1999 Optimizing the clean effect of wafer backside in lithography developer process

Hsun-Peng Lin, Chun-Hong Chang, Chih-Hsiung Lee, Sheng-Liang Pang, Kuo-Liang Lu

Proceedings Volume 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V; (1999) https://doi.org/10.1117/12.361309
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

In the photo process, the defect of developer residue on wafer backside is always negligible. Such as figure 1 is the photographs of residue defect onto wafer backside, this defect is easy to induce some problems such as a wafer transfer error, chamber particle in the etcher machine and rework issue for cleaning wafer backside. In this paper, we provide serval methods to prevent the 'developer residue on wafer backside issue' reoccurrence. Specially the clean effect of wafer backside of developer process had to be improved effectively, the effective clean method include the gap (distance) be optimized from the knife edge to wafer backside with the various film (Silicon; Nitride; Poly: TEOS; PESIN film) and the liquid drain port of developer machine had to be modified to reduce the remained liquid that is absorbed onto wafer backside.

Citation Download Citation

Hsun-Peng Lin, Chun-Hong Chang, Chih-Hsiung Lee, Sheng-Liang Pang, and Kuo-Liang Lu "Optimizing the clean effect of wafer backside in lithography developer process", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361309

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