Integration of a high-Q spiral inductor into an existing digital CMOS backend

John D. Butler; Clay Crouch

doi:10.1117/12.360572

11 August 1999 Integration of a high-Q spiral inductor into an existing digital CMOS backend

John D. Butler, Clay Crouch

Proceedings Volume 3883, Multilevel Interconnect Technology III; (1999) https://doi.org/10.1117/12.360572
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

A spiral inductor is integrated into an existing CMOS triple layer backend process. To obtain a high quality factor `Q' for the inductor the existing one micron thick metal 3 process was replaced by a three micron thick metal process. The necessary process modifications to integrate this thicker metal process are presented.

Citation Download Citation

John D. Butler and Clay Crouch "Integration of a high-Q spiral inductor into an existing digital CMOS backend", Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); https://doi.org/10.1117/12.360572

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