Pioneering breakthroughs in implant monitor wafer cost reduction at 300 mm

Jason S. Zeakes; Terry A. Breeden

doi:10.1117/12.361361

27 August 1999 Pioneering breakthroughs in implant monitor wafer cost reduction at 300 mm

Jason S. Zeakes, Terry A. Breeden

Proceedings Volume 3884, In-Line Methods and Monitors for Process and Yield Improvement; (1999) https://doi.org/10.1117/12.361361
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The semiconductor industry has been full of news regarding the transition to 300 mm wafers. In 1998, SEMICONDUCTOR300 (SC300) was the first to demonstrate the capability to produce integrated products on 300 mm wafers. To meet the challenge of maintaining quality while simultaneously reducing cost and ramping SC300 into pilot manufacturing, the authors have investigated the use of an overlay implant technique. A single 300 mm wafer is used to collect particle, high dose, and low dose information from a Eaton GSD HE-3 ion implanter. The implants, a high dose As+ 80 KeV 3E14 followed by a low dose As+ 60 KeV 3E11 damage implant, are measured using a KLA/Tencor Rs100 sheet resistance measurement tool with a 3 mm edge exclusion. In addition to verifying the technique at 300 mm, the paper presents overlay implant data collected using externally reclaimed wafers, currently one third the cost of prime 300 mm wafers, and explores the possibility of reusing implanted monitor wafers by re-annealing the wafers and repeating the low dose damage implant. Initial data is also presented for implants performed on the backside of 300 mm wafers.

Citation Download Citation

Jason S. Zeakes and Terry A. Breeden "Pioneering breakthroughs in implant monitor wafer cost reduction at 300 mm", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); https://doi.org/10.1117/12.361361

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