New plasma technique for the deposition of silica layers for integrated optics applications

Cristina Panciatichi; Maria Chiara Natascia De Leo

doi:10.1117/12.379942

24 March 2000 New plasma technique for the deposition of silica layers for integrated optics applications

Cristina Panciatichi, Maria Chiara Natascia De Leo

Proceedings Volume 3936, Integrated Optics Devices IV; (2000) https://doi.org/10.1117/12.379942
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

An inductively coupled plasma torch has been used for the synthesis of high-purity, low OH concentration, fused silica layers, for integrated optics applications. This technique is very versatile and the same apparatus can be used to deposit silica layers doped with different elements but this work is particularly devoted to the germanium-doped silica layers. The torch, designed and built in-house, operates at atmospheric pressure and is posed by a 13.56 MHz, 5.4 kW, RF generator. The gaseous reactants are injected in the plasma tail flame by a silica nozzle. Planar silica targets are suitably moved over the torch exit in order to obtain the desired deposition. The samples made by means of this chemical vapor deposition process have been chemically and physically analyzed using various techniques: optical microscopy, scanning electron microscopy, atomic force microscopy, x-ray diffractometer, UV, visible and IR spectroscopy, to test their morphological, geometrical, chemical and optical characteristics. By this plasma- assisted technique it has been possible to achieve the deposition of pure and germanium doped silica layers with good optical and morphological characteristics. Preliminary direct UV photoinduction experiments are very promising: a high refractive index change has been measured.

Citation Download Citation

Cristina Panciatichi and Maria Chiara Natascia De Leo "New plasma technique for the deposition of silica layers for integrated optics applications", Proc. SPIE 3936, Integrated Optics Devices IV, (24 March 2000); https://doi.org/10.1117/12.379942

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